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Welcome to the Memory Techonology of Embedded Systems MCQs Page

Dive deep into the fascinating world of Memory Techonology of Embedded Systems with our comprehensive set of Multiple-Choice Questions (MCQs). This page is dedicated to exploring the fundamental concepts and intricacies of Memory Techonology of Embedded Systems, a crucial aspect of Embedded Systems. In this section, you will encounter a diverse range of MCQs that cover various aspects of Memory Techonology of Embedded Systems, from the basic principles to advanced topics. Each question is thoughtfully crafted to challenge your knowledge and deepen your understanding of this critical subcategory within Embedded Systems.

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Check out the MCQs below to embark on an enriching journey through Memory Techonology of Embedded Systems. Test your knowledge, expand your horizons, and solidify your grasp on this vital area of Embedded Systems.

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Memory Techonology of Embedded Systems MCQs | Page 9 of 17

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Discuss
Answer: (c).extended data out
Discuss
Answer: (c).Rambus DRAM
Q83.
Which of the following can transfer up to 1.6 billion bytes per second?
Discuss
Answer: (b).RDRAM
Q84.
Which of the following cycle is larger than the access time?
Discuss
Answer: (c).read cycle
Q85.
Which mode of operation selects an internal page of memory in the DRAM interfacing?
Discuss
Answer: (b).page mode
Q86.
What is the maximum time that the RAS signal can be asserted in the page mode operation?
Discuss
Answer: (b).10 microseconds
Q87.
Which of the following mode of operation in the DRAM interfacing has a page boundary?
Discuss
Answer: (c).page mode
Q88.
Which mode offers the banking of memory in the DRAM interfacing technique?
Discuss
Answer: (c).page interleaving
Q89.
Which of the following has a fast page mode RAM?
Discuss
Answer: (c).EDO memory
Q90.
Which mode reduces the need for fast static RAMs?
Discuss
Answer: (c).burst mode

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